User Case 3: Optimization of Wafering Yield for SiC Puck

This user case focuses on optimizing the wafering yield for a cylindrical or puck-shaped silicon carbide (SiC) crystal. Yield’s Smart Wafering feature helps maximize the number of wafers obtained from a crystal by adjusting wafering parameters.

Steps to Optimize Wafering Yield for SiC Puck

1. Open Crystal Model: Start by opening the crystal model in Yield. Ensure the crystal has a cylindrical or puck-like shape, as this process is specifically designed for such geometries.

2. Switch to Smart Wafering Mode: Navigate to the Smart Wafering mode within the software. This tool optimizes wafer production by calculating the best positioning and shift values based on the crystal’s dimensions and defects.

3. Input Wafer Parameters: Enter the required wafering parameters, such as wafer thickness and spacing. These settings guide the software in determining the optimal slicing approach.

4. Select the Right Wire Position on the Plot: Use the plot to select the ideal position for the wire that will cut the wafers. The plot visualizes the wafering process and helps minimize wastage.

5. Yield Provides Optimal Shift Value: Yield will automatically calculate the optimal shift value, which maximizes the number of wafers. This value is inserted into the Offset field by default.

   Tip

   You can manually adjust the offset value to further fine-tune the wafering process based on specific production needs.

By following these steps, you can optimize the wafering process for a SiC puck-shaped crystal, maximizing yield and minimizing defects.